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|a POSLANO DO SKCR
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|a 5-256-00136-1
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|a BOD004
|b cze
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| 245 |
0 |
0 |
|a Polevyje tranzistory na arsenide gallija :
|b principy raboty i technologija izgotovlenija /
|c Ed. J. V. DiLorenzo, D. D. Khandelwal.
|
| 246 |
1 |
1 |
|a GaAs fet principles and technology
|
| 260 |
|
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|a Moskva :
|b Radio i svjaz',
|c 1988.
|
| 300 |
|
|
|a 496 s.
|
| 655 |
|
7 |
|a monografie
|7 fd132842
|2 czenas
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| 700 |
1 |
|
|a DiLorenzo, James V.
|4 edt
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| 700 |
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|a Khandelwal, Deen D.
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